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X-Y-Z TYPE EB lithography system CABL-9000C series |
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| ■features |
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-Upgraded CABL series as user-friendly multi user management
-Windows OS, conversion soft for GDSII & DXF CAD files
-point beam
-TFE emitter
-Achieving <2nm line width with 50kV acceleration voltage
-High stitching & overlay accuracy
-Stable beam current & beam position
-Field size modulation (patented) -minimum address size as 0.0012nm
-Chirped GRT
-Axial Symmetrical PatternWritting method
-Thermal cotroller
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| ■specifications |
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| Gun/Acceleration Voltage |
TFE（ZrO/W）/5-50kV |
| Beam size/min. width |
2.0nm/10nm |
| Scanning method |
Vector scan(X,Y), Vector scan(r,theta) standard |
| Raster scan, spot scan(option) |
Field size modulation, Axial symmetrical pattern,
RAM DAC digital spot writing, 3D writing method |
| Field size |
30umx30um,60umx60um,120umx120um,300umx300um,
600umx600um(standard)
1200umx1200um,2400umx2400um(option) |
| Pixel |
20,000x20,000dot,60,000x60,000dot@vector scan(standard)240,000x240,000dot@vector scan(option)4,000x4,000dot，4,000x4,000dot,10,000x10,000dot@raster scan(option) |
| Min. address size |
10nm@600umx600um field,2nm@120umx120um field(standard)
0.0012nm@500umx500um field(option) |
Scan rate/
Resolution |
Vector scan(Analog): 0.05-300uS/0.01us(standard)
Vector scan(Digital): 0.2-300uS/0.1us(standard)
Raster scan: 0.3-300uS/0.1us(Option) |
| Wafer size |
4,6,8inchΦ(other size, other shape is OK) |
| Stitching accuracy |
50nm(3sigma)@500umx500um,
20nm(2sigma)@50umx50um |
| Overlay accuracy |
50nm(3sigma)@500umx500um,
20nm(2sigma)@50umx50um |
| CAD software |
original CAD(standard),ＧDSⅡconversion(option),
DXＦ conversion(option) |
| OS |
Windows2000, XP |
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