クレステックは徹底したマーケットイン志向の電子線描画技術を専門としたナノテク企業です

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CABL-UH(130kV)series

CABL-UH

There is less forwardscatter of EB resist due to higher acceleration voltage. CABL-UH model has more accuracy less than 10nm. You can select 90kV, 110kV or 130kV due to your budjet.

Beam diameter: <1.6 nmΦ
Minimum line width: 7 nm (at 130kV)
Accerelation Voltage: 130 kV, 110 kV or 90 kV
Stage size: 8 inch wafer (you can use any other wafers less than 8 inch wafer)

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Special Features

◆ Vacc: 130kV Max (25-130kV, 5kV steps)

◆ Single-Stage Acceleration capability up to 130kV to minimize EOC size

◆ Micro-Discharge Free Electron Gun

◆ Beam Diameter: >1.6nm 

◆ Capability of Fine Line: <7nm
 
◆ Electrostatic Lens between emitter and anode is designed to achieve very low aberration and short-rang
    crossover image at the center of blanking electrodes

◆ Ultra-stable write capability is achieved using dual thermal controllers

Specifications

Electron Emitter/
Acceleration voltage
TFE(ZrO/W)/25~130kV
Min. beam diameter/
Min. line width
1.6nm/ 7.0nm
Scan method Vector scan(x,y),Vector scan(r,θ)(Standard)
Raster scan,Spot scan(Optional)
Advanced lithography
functions(Optional)
Field size modulation lithography,axial symmetry pattern lithography
Field size 30μm□,60μm□,120μm□,300μm□,600μm□(Standard)
1200μm□,2400μm□(Optional)
Number of pixels 20,000×20,000dot,60,000×60,000dot,96,000×96,000dot,
240,000×240,000dot@Vector scan(Standard)
10,000×10,000dot@Raster scan(Optional)
Min. address size 10nm@600μm□field,2nm@120μm□field(Standard)
0.0012nm@600μm□field (Optional)
Work piece size 4,6,8inchΦ(work pieces of other sizes and other shapes can be mounted with our flexible contrivances)
Stitching accuracy 50nm(3σ)@600μm□,20nm(2σ)@60μm□
Overlay accuracy 50nm(3σ)@600μm□
CAD software Dedicated CAD(Standard),GDSⅡconversion(Optiional),
DXF conversion(Optional)
OS Windows

CABL-9000C(50kV)series

It is the best model for production of DFB-Laser diode for optical communication devices. We realize high resolution and high throughput with 50kV.

Beam diameter: < 2 nmΦ
Minimum line width: 10 nm
Accerelation voltage: 50kV, 30kV
Stage size: 4 inch, 6 inch ,8 inch wafer model

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Special Features

◆ TFE 50kV

◆ High resolution as same as 100kV

◆ High accurate stitch writing for long time by specially designed laser interferometer

◆ Multi-user environment (PC controlled EOC = Recipe)

◆ Self environment control - Thermal & noise free

◆ Flexible writing methods (vector, vector R-theta, raster, spot, axial symmetrical, field size modulation,
    multi-mode, 3D)

◆ CE marking

Specifications

Electron Emitter/
Acceleration voltage
TFE(ZrO/W)/5~50kV
Min. beam diameter/
Min. line width
2.0nm / 10nm guaranteed 
Scan method Vector scan(x,y),Vector scan(r,θ) (Standard)
Raster scan,Spot scan (Optional)
Advanced lithography
functions(Optional)
Field size modulation lithography,axial symmetry pattern lithography
Field size 30μm□,60μm□,120μm□,300μm□,600μm□(Standard)
1200μm□,2400μm□(Optional)
Number of pixels 20,000×20,000dot,60,000×60,000dot@vector scan(Standard)
240,000×240,000dot@Vector scan(Optional)
4,000×4,000dot,10,000×10,000dot@Raster scan(Optional)
Min. address size 10nm@600μm□field,2nm@120μm□field(Standard)
0.0012nm@600μm□field(FSM Optional)
Work piece size 4,6,8inchΦ
Stitching accuracy 50nm(3σ)@600μm□,20nm(2σ)@60μm□
Overlay accuracy 50nm(3σ)@600μm□
CAD software Dedicated CAD(Standard),GDSⅡconversion (Optional),
DXF conversion(Optional)
OS Windows

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